Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

被引：34

作者：

Hu, CW ^{[1
]}

Bell, A

Ponce, FA

Smith, DJ

Tsong, IST

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 17期

关键词：

D O I：

10.1063/1.1514394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled nanometer-scale GaN quantum dots were fabricated on 6H-SiC(0001) substrates via the formation of Ga liquid droplets and their subsequent nitridation with a supersonic gas source seeded with NH3 molecules. The entire process was observed and controlled in situ and in real time in a low-energy electron microscope. The microstructure of the quantum dots was studied by high-resolution cross-sectional transmission electron microscopy illustrating the perfectly coherent wurtzite structure of GaN quantum dots with 5 nm base width. Spatially resolved cathodoluminescence spectra yield the characteristic band edge emission near 3.48 eV for larger size GaN dots. (C) 2002 American Institute of Physics.

引用

页码：3236 / 3238

页数：3

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