Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

被引：112

作者：

Damilano, B ^{[1
]}

Grandjean, N ^{[1
]}

Dalmasso, S ^{[1
]}

Massies, J ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 24期

关键词：

D O I：

10.1063/1.125444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN/GaN self-assembled quantum dots (QDs) were obtained by molecular beam epitaxy making use of the Stranski-Krastanov growth mode. Room-temperature photoluminescence (PL) energy of QDs was observed from 2.6 to 3.1 eV depending on the dot size. PL linewidths as low as 40-70 meV at 10 K and 90-110 meV at 300 K indicate low dot size dispersion. The comparison of PL intensity versus temperature of an InGaN epilayer and InGaN/GaN QDs demonstrates the higher radiative efficiency of the latter. (C) 1999 American Institute of Physics. [S0003-6951(99)01950-6].

引用

页码：3751 / 3753

页数：3

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