Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia

被引：78

作者：

Grandjean, N

Massies, J

Vennegues, P

Leroux, M

Demangeot, F

Renucci, M

Frandon, J

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

[2] Univ Toulouse 3, Phys Solides Lab, F-31032 Toulouse 4, France

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 03期

关键词：

D O I：

10.1063/1.366840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ammonia is used for growing undoped GaN layers by gas source molecular-beam epitaxy on c-plane sapphire substrates. The growth mode is layer by layer as shown by the observation of reflection high-energy electron diffraction intensity oscillations. The structural quality is studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Low-temperature photoluminescence (PL) and reflectivity demonstrate intrinsic excitonic emission. Room-temperature PL exhibits a strong band-edge intensity and a weak deep-level emission, the so-called yellow band. Finally, secondary ion mass spectroscopy is carried out to check the residual impurity levels of Si, C, and O. (C) 1998 American Institute of Physics. [S0021-8979(98)01203-1].

引用

页码：1379 / 1383

页数：5

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