Homoepitaxial growth and lasing properties of ZnS nanowire and nanoribbon arrays

被引：137

作者：

Jiang, Yang

Zhang, Wen Jun ^{[1
]}

Jie, Jian Sheng

Meng, Xiang Min

Zapien, Juan Antonio

Lee, Shuit-Tong

机构：

[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

[3] Chinese Acad Sci, Tech Inst Phys & Chem, NanoOrgan Photoelect Lab, Beijing 100101, Peoples R China

[4] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei, Anhui, Peoples R China

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 12期

关键词：

D O I：

10.1002/adma.200501913

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Orientation-dependent cathodoluminescence has been found in crossed nanowire arrays (see figure). ZnS crossed nanowire arrays and aligned nanoribbons are grown on micrometerwide single-crystal ZnS ribbon substrates, which leads to bandgap lasing emission in two specific directions. The reported results present a new route to synthesize II-VI semiconducting nanostructures with attractive photoelectronic properties.

引用

页码：1527 / +

页数：7

共 56 条

[1] Field-effect transistors based on single semiconducting oxide nanobelts [J].