Synthesis and characterization of some ZnS-based thin film phosphors for electroluminescent device applications

被引：145

作者：

Dimitrova, V ^{[1
]}

Tate, J ^{[1
]}

机构：

[1] Oregon State Univ, Dept Phys, Corvallis, OR 97331 USA

来源：

THIN SOLID FILMS | 2000年 / 365卷 / 01期

基金：

美国国家科学基金会;

关键词：

electroluminescence; ZnS-based thin films; evaporation; surface composition;

D O I：

10.1016/S0040-6090(99)01089-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnS:Mn, ZnGaS:Mn and ZnS:CuCl2 phosphor thin films for alternating-current thin-film electroluminescent (ACTFEL) devices were prepared by thermal evaporation from two and three sources, respectively. Films are polycrystalline, strongly oriented and stoichiometric or nearly stoichiometric with high optical transmission in the visible part of the spectrum. The band gap of ZnS:Mn, ZnGaS:Mn and ZnS:CnCl(2) Alms was found to be 3.63, 3.86 and 3.56 eV, respectively. The sheet resistance of the ZnS:Mn and ZnGaS:Mn films was greater than 100 Mn. The resistivity of ZnS:CuCl2 films was between 1.5-80 Omega cm. Photoluminescent (PL) and electroluminescent (EL) characteristics were also studied. The results indicate that after the optimization the investigated phosphor thin films will be suitable for ACTFEL device applications. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：134 / 138

页数：5

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