Pressure effects in ZnO films using off-axis sputtering deposition

被引:27
作者
Zhu, S
Su, CH
Lehoczky, SL
Peters, P
George, MA
机构
[1] NASA, George C Marshall Space Flight Ctr, Space Sci Lab, USRA, Huntsville, AL 35812 USA
[2] NASA, George C Marshall Space Flight Ctr, Sci Directory, Huntsville, AL 35812 USA
[3] Univ Alabama, Dept Chem, Huntsville, AL 35899 USA
关键词
ZnO; photonic material; off-axis sputtering; morphology; growth mechanism;
D O I
10.1016/S0022-0248(99)00798-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
ZnO films are deposited on (0 0 0 1) sapphire and quartz substrates using the off-axis reactive magnetron sputtering deposition. Based on film thickness measurements, three transport regions of sputtered particles are observed when films are deposited in the pressure regions of 5-150 mTorr, X-ray diffraction, scanning probes microscopy, and electrical measurements are also used to characterize these films. The full-width at half-maximum of theta-rocking curves for epitaxial films is less than 0.5 degrees. In textured films, it rises to several degrees. The epitaxial films deposited at high pressure reveal a flat surface with some hexagonal facets. The density of hexagonal facets decreases when the growth pressure is reduced. The resistivity of these epitaxial films also depends on the growth pressures. A relationship between the pressure effects and film properties are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:106 / 110
页数:5
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