Characterization of MgO(100) thin film growth on Mo(100)

被引：24

作者：

Kim, YD ^{[1
]}

Stultz, J ^{[1
]}

Goodman, DW ^{[1
]}

机构：

[1] Texas A&M Univ, Dept Chem, College Stn, TX 77842 USA

来源：

SURFACE SCIENCE | 2002年 / 506卷 / 03期

关键词：

photoelectron spectroscopy; magnesium oxides; carbon monoxide; surface defects;

D O I：

10.1016/S0039-6028(02)01386-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Various MgO thin films grown on Mo(1 0 0) have been characterized by using metastable impact electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy, low energy electron diffraction (LEED), and CO as a probe molecule to titrate defects. Using MIES and LEED, the as-grown MgO(1 0 0) films (thickness = approximate to15 monolayers (MLs)) are found to be highly defective. Annealing at 1150 K significantly reduces the density of defects on the MgO(1 0 0) surfaces. CO adsorbs on the as-grown MgO(1 0 0) film at 90 K, whereas no CO adsorption was detected on the annealed MgO(1 0 0) film, in agreement with the MIES and LEED results. For MgO thin films with a thickness of 15 ML, no surface charging was observed during the UPS/MIES measurements. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：228 / 234

页数：7

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