The analysis of a thin SiO2/Si3N4/SiO2 stack:: A comparative study of low-energy heavy ion elastic recoil detection, high-resolution Rutherford backscattering, and secondary ion mass spectrometry

被引:5
作者
Brijs, B.
Sajavaara, T.
Giangrandi, S.
Janssens, T.
Conard, T.
Arstila, K.
Nakajima, K.
Kimura, K.
Bergmaier, A.
Dollinger, G.
Vantomme, A.
Vandervorst, W.
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] KULeuven, IKS, B-3001 Louvain, Belgium
[3] Katholieke Univ Leuven, INSYS, B-3001 Heverlee, Belgium
[4] Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland
[5] Kyoto Univ, Dept Microengn, Sakyo Ku, Kyoto 6068501, Japan
[6] Univ Bundeswehr Munchen, Neubiberg, Germany
关键词
ERDA; thin film analysis; light elements; microelectronics;
D O I
10.1016/j.nimb.2006.03.191
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 [仪器科学与技术]; 080401 [精密仪器及机械]; 081102 [检测技术与自动化装置];
摘要
The analysis of thin films in the range of 10 nm and less has become very important in microelectronics. The goal of this article is an evaluation of low-energy TOF-ERDA (time-of-flight elastic recoil detection analysis) in comparison with low-energy SIMS (secondary ion mass spectrometry) and HRBS (high-resolution Rutherford backscattering spectrometry), using a thin SiO2/Si3N4/SiO2 stack as a test vehicle. Comparisons are made on the depth resolution, its loss as a function of depth and the quantification accuracy. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:847 / 850
页数:4
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