MgNi/Pd multilayer hydrogen storage thin films prepared by dc magnetron sputtering

被引:35
作者
Ouyang, L. Z.
Wang, H.
Chung, C. Y.
Ahn, J. H.
Zhu, M. [1 ]
机构
[1] S China Univ Technol, Coll Mech Engn, Guangzhou 510641, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[3] Andong Natl Univ, Dept Mat Engn, Gyungbuk 760749, South Korea
基金
中国国家自然科学基金;
关键词
hydrogen storage; thin films; magnetron sputtering; magnesium (Mg);
D O I
10.1016/j.jallcom.2005.03.127
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
MgNi/Pd multilayer thin films were deposited on Ni substrate by direct current (dc) magnetron sputtering using a dual-target, each MgNi layer being 40 mn and each Pd layer being 16 nm in thickness. The total thickness of the MgNi/Pd multilayer thin film is about 1.7 mu m. X-ray diffraction and scanning electron microscopy analysis revealed that the microstructure of the MgNi layer is amorphous and/or nanocrystalline and that the microstructure of the I'd layer is fine grained crystalline with no preferential orientation. A pressure-composition-isotherm (PCI) measurement of films proved that the hydrogen absorption content reached to 4.6 mass% at room temperature and hydrogen desorption reached 3.4 mass% hydrogen. The deposited MgNi/Pd multilayer thin films show an interesting behavior of discharge capacity with a maximal value of 505 mAh/g. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:58 / 61
页数:4
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