Effects of interactions and disorder on the compressibility of two-dimensional electron and hole systems

被引：4

作者：

Galaktionov, E. A.

Allison, G. D.

Fogler, M. M.

Savchenko, A. K.

Safonov, S. S.

Simmons, M. Y.

Ritchie, D. A.

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 34卷 / 1-2期

关键词：

compressibility; metal-insulator transition; capacitance; DENSITY-OF-STATES; GAS;

D O I：

10.1016/j.physe.2006.03.115

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The compressibility chi of dilute two-dimensional electron and hole gases in GaAs semiconductor structures has been studied in the ranges of the interaction parameter r(s) = 1-2.5 and r(s) = 10-30 for the electron and hole system, respectively. Nonmonotonic dependence of chi(-1) with an upturn at low carrier densities is observed. Despite the large difference in r(s) the behavior of chi(-1) in both systems can be accurately described by the theory of nonlinear screening of disorder by the carriers. (c) 2006 Elsevier B.V. All rights reserved.

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页码：240 / 243

页数：4

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