Ferroelectric (116) SrBi2Nb2O9 thin films epitaxially grown by pulsed laser deposition on epitaxial (110) Pt/(110) SrTiO3 electrode

被引：26

作者：

Duclère, JR

Guilloux-Viry, M

Perrin, A

Cattan, E

Soyer, C

Rèmiens, D

机构：

[1] Univ Rennes 1, Inst Chim Rennes, Chim Solide & Inorgan Mol Lab, CNRS,UMR 6511, F-35042 Rennes, France

[2] Univ Valenciennes & Hainaut Cambresis, MIMM, Dept OAE,ZI Champ Abbesse, Inst Elect & Microelect Nord,CNRS,UMR 8520, F-59600 Maubeuge, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 11期

关键词：

D O I：

10.1063/1.1504179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial SrBi2Nb2O9 thin films have been grown by pulsed-laser deposition on (110)Pt bottom electrode epitaxially grown on (110) SrTiO3 by dc sputtering. X-ray Phi-scans and electron channeling patterns reveal the epitaxial growth of the (116) SrBi2Nb2O9/(110)Pt bilayers. The hysteresis loop, dielectric response, and capacitance-voltage characteristics of this bilayer are presented. The remnant polarization was measured to be close to 5 muC/cm2, and the coercive field was calculated to be similar to120 kV/cm. The zero field permittivity was about 150 and the dielectric loss was similar to2%. (C) 2002 American Institute of Physics.

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页码：2067 / 2069

页数：3

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