Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors

被引：116

作者：

Lee, Byoung Hoon ^{[1
]}

Bazan, Guillermo C. ^{[1
]}

Heeger, Alan J. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 01期

基金：

美国国家科学基金会;

关键词：

HIGH-PERFORMANCE; HIGH-MOBILITY; SEMICONDUCTING POLYMERS; ORGANIC TRANSISTORS; FILM; ELECTRODES; MONOLAYERS; IODINE; LAYER;

D O I：

10.1002/adma.201504307

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b: 5,4-b'] dithiophen-2-yl)alt-[1,2,5] thiadiazolo-[3,4-c] pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.

引用

页码：57 / +

页数：7

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