Growth of bulk SiC by halide chemical vapor deposition

被引：31

作者：

Fanton, M

Skowronski, M

Snyder, D

Chung, HJ

Nigam, S

Weiland, B

Huh, SW

机构：

[1] Penn State Appl Res Lab, Freeport, PA 16229 USA

[2] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷

关键词：

chemical vapor deposition; semi-insulating; halide growth rate; high purity;

D O I：

10.4028/www.scientific.net/MSF.457-460.87

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel halide chemical vapor deposition (HCVD) process has been developed for bulk growth of high purity, single crystal 6H SiC. The effects of major process parameters including furnace temperature over the range of 1900-2150degreesC, reactor pressure over the range of 20-400 torr, reactant concentrations, and flow rates on the growth rate, crystallinity, and electrical properties of the single-crystal 6H boules grown by HCVD are described. Typical growth rates for the 6H polytype are on the order of 100-125 mum/h with a maximum observed rate of 180 mum/h. Thicknesses up to I mm. have been demonstrated. GDMS analyses of the purity of HCVD grown material is discussed and compared to 6H SiC produced by commercial PVT and HTCVD processes. Boron and aluminum concentrations less than 1.8 E-15 atoms/cm(3) were demonstrated.

引用

页码：87 / 90

页数：4

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