High temperature chemical vapor deposition of SiC

被引：109

作者：

Kordina, O

Hallin, C

Ellison, A

Bakin, AS

Ivanov, IG

Henry, A

Yakimova, R

Touminen, M

Vehanen, A

Janzen, E

机构：

[1] ABB CORP RES,S-72178 VASTERAS,SWEDEN

[2] OKMETIC LTD,ESPOO 02631,FINLAND

[3] OUTOKUMPU SEMITRON AB,S-16111 BROMMA,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 10期

关键词：

D O I：

10.1063/1.117613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A growth process has been investigated for the epitaxial growth of silicon carbide. The technique can simply be described as chemical vapor deposition (CVD) at high temperatures, hence the name high temperature CVD (HTCVD). The growth process however, differs greatly from that of the CVD process due to the significant sublimation and etch rates at the extreme growth temperatures (1800-2300 degrees C). The grown rates obtained with the HTCVD are in the order of several tens of mu m/h to 0.5 mm/h. The purity and crystallinity of the growth layers are outstanding showing strong free exciton related photoluminescence. (C) 1996 American Institute of Physics.

引用

页码：1456 / 1458

页数：3

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