Analytical expression for impact of linewidth roughness on critical dimension uniformity

被引:26
作者
Mack, Chris A. [1 ]
机构
[1] Lithoguru Com, Austin, TX 78703 USA
来源
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2014年 / 13卷 / 02期
关键词
critical dimension uniformity; line-edge roughness; linewidth roughness; power spectral density;
D O I
10.1117/1.JMM.13.2.020501
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For a feature of finite length, linewidth roughness leads to variations in the mean feature width. Typically, numerical simulations are used to explore this relationship. An analytical approach is used. Starting with a common expression for the power spectral density, an analytical expression relating critical dimension uniformity to linewidth roughness is derived. The derived expression matches simulation results extremely well and can be used to understand more fully the detrimental impact of feature roughness on lithographic results. Finally, based on this expression, a new metric of linewidth roughness is proposed. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
收藏
页数:3
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