Low temperature metallic state induced by electrostatic carrier doping of SrTiO3

被引：59

作者：

Nakamura, H. ^{[1
]}

Takagi, H.

Inoue, I. H.

Takahashi, Y.

Hasegawa, T.

Tokura, Y.

机构：

[1] Natl Inst Adv Ind Sci & Technol AIST, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3058562, Japan

[2] Univ Tokyo, Dept Adv Mat, Kashiwa, Chiba 2778581, Japan

[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 13期

关键词：

D O I：

10.1063/1.2357850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R-square similar to 10 k Omega at low temperatures, with carrier mobility exceeding 1000 cm(2)/V s. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (dR/dT > 0). Results demonstrate an insulator to metal transition in SrTiO3 driven by electrostatic carrier density control. (c) 2006 American Institute of Physics.

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页数：3

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