Batch transfer integration of RF microrelays

被引：15

作者：

Milanovic, V ^{[1
]}

Maharbiz, M ^{[1
]}

Pister, KSJ ^{[1
]}

机构：

[1] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 2000年 / 10卷 / 08期

关键词：

batch transfer; flip-chip bonding; microelectromechanical systems; RF MEMs; RF switch;

D O I：

10.1109/75.862225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the first implementation of batch-transferred microrelays for a broad range of RF applications and substrates. The transferred relays include two types of electrostatic pull-down structures for series and shunt switching of a CPW. The batch-transfer methodology allows integration of optimized microelectromechanical systems (MEMS) in RF systems on substrates such as sapphire, GaAs, and even CMOS. Gold-to-gold contact series microrelays with insertion loss of <0.3 dB, and isolation better than 15 dB at frequencies from 100 MHz to 50 GHz are demonstrated, as well as shunt switches with >45 dB of isolation and <0.3 dB insertion loss in that frequency range.

引用

页码：313 / 315

页数：3