Influence of nonlinear absorption on Raman amplification in Silicon waveguides
被引:217
作者:
Claps, R
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h-index: 0
机构:
Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA
Claps, R
[1
]
Raghunathan, V
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h-index: 0
机构:
Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA
Raghunathan, V
[1
]
Dimitropoulos, D
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h-index: 0
机构:
Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA
Dimitropoulos, D
[1
]
Jalali, B
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h-index: 0
机构:
Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USAUniv Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA
Jalali, B
[1
]
机构:
[1] Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA
来源:
OPTICS EXPRESS
|
2004年
/
12卷
/
12期
关键词:
D O I:
10.1364/OPEX.12.002774
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening. (C) 2004 Optical Society of America.