Influence of nonlinear absorption on Raman amplification in Silicon waveguides

被引：217

作者：

Claps, R ^{[1
]}

Raghunathan, V ^{[1
]}

Dimitropoulos, D ^{[1
]}

Jalali, B ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Optoelect Circuits & Syst Lab, Los Angeles, CA 90095 USA

来源：

OPTICS EXPRESS | 2004年 / 12卷 / 12期

关键词：

D O I：

10.1364/OPEX.12.002774

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening. (C) 2004 Optical Society of America.

引用

页码：2774 / 2780

页数：7