Fabrication and transport properties of clean long one-dimensional quantum wires formed in modulation-doped GaAs/AlGaAs heterostructures

被引：31

作者：

Liang, CT ^{[1
]}

Simmons, MY ^{[1
]}

Smith, CG ^{[1
]}

Ritchie, DA ^{[1
]}

Pepper, M ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 19期

关键词：

D O I：

10.1063/1.125206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the fabrication and transport properties of clean long one-dimensional quantum wires formed in high-quality modulation-doped GaAs/AlGaAs heterostructures. In a 3 mu m wire, we observe 25 conductance steps with no superimposed resonant features. With increasing split-gate length, we observe a crossover from ballistic towards diffusive transport, and in 5 and 6 mu m wires, a reduction of conductance plateau values as large as 8% and 25% is observed, respectively. (C) 1999 American Institute of Physics. [S0003-6951(99)05545-X].

引用

页码：2975 / 2977

页数：3

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