Diamond microelectronic gas sensors

被引：32

作者：

Gurbuz, Y ^{[1
]}

Kang, WP ^{[1
]}

Davidson, JL ^{[1
]}

Kinser, DL ^{[1
]}

Kerns, DV ^{[1
]}

机构：

[1] VANDERBILT UNIV,DEPT APPL & ENGN SCI,NASHVILLE,TN 37235

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1996年 / 33卷 / 1-3期

关键词：

microelectronic gas sensor; diamond; plasma enhanced chemical vapor deposition;

D O I：

10.1016/0925-4005(96)01839-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Diamond-based microelectronic gas sensors using plasma enhanced chemical vapor deposition (PECVD) technology have been explored in our laboratory. This paper presents a new gas sensor using Pd/i-diamond/p-diamond structure for hydrogen detection. Hydrogen sensitivity of the device has been characterized and analyzed as a function of hydrogen partial pressure and temperature by using current-voltage (I-V) and capacitance-voltage-frequency (C-V-F) methods. The hydrogen sensitivity is high, reproducible, and repeatable over a wide temperature range including room temperature.

引用

页码：100 / 104

页数：5

共 5 条

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KANG, WP
KIM, CK
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1994, 22 (01) : 47 - 55
[3] COMPARISON AND ANALYSIS OF PD-GAAS AND PT-GAAS SCHOTTKY DIODES FOR HYDROGEN DETECTION
KANG, WP
GURBUZ, Y
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[4] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR
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[5] LUNSTROM I, 1986, SENSOR ACTUATOR, V10, P399

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