Magnetization reversal and interlayer coupling in magnetic tunneling junctions

被引：34

作者：

Schrag, BD ^{[1
]}

Anguelouch, A

Xiao, G

Trouilloud, P

Lu, Y

Gallagher, WJ

Parkin, SSP

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

[3] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.373129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the switching properties of micron-scale magnetic tunnel junctions in two-dimensional magnetic fields. We present data on interlayer magnetic coupling for multiple samples. We interpret these data as the sum of a magnetostatic and a Neel coupling contribution. The data are presented as functions of layer structure. In addition, we have extracted information about interface roughness. We have also studied the area of switching critical curves as a function of device geometry. (C) 2000 American Institute of Physics. [S0021-8979(00)25708-3].

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页码：4682 / 4684

页数：3

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