Experimental measurement of the intensity profiles of a low-energy electron beam extracted from a scanning tunneling microscope tip by field emission

被引：4

作者：

Kawamoto, I ^{[1
]}

Li, N ^{[1
]}

Yoshinobu, T ^{[1
]}

Iwasaki, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 10期

关键词：

low-energy electron beam; STM; e-beam profile; SiO2;

D O I：

10.1143/JJAP.38.6172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intensity profile of a low-energy electron beam (e-beam) extracted from the tip apex of a scanning tunneling microscope (STM) in the field emission mode was measured in an ultrahigh-vacuum environment. The sizes of areas where the native Si oxide was removed by exposure to the low-energy e-beam were measured as a function of the e-beam exposure time, and it was found that the e-beam has a Gaussian-type lateral profile. The results show that the e-beam profile can be controlled by adjusting the parameters of the e-beam emission and that the sizes of the Si oxide opening windows can he adjusted by varying the e-beam exposure time.

引用

页码：6172 / 6173

页数：2

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