Investigation of residual impurities in 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition

被引：8

作者：

Nishio, J

Kushibe, M

Masahara, K

Kojima, K

Ohno, T

Ishida, Y

Takahashi, T

Suzuki, T

Tanaka, T

Yoshida, S

Arai, K

机构：

[1] R&D Assoc Future Electron Devices, Adv Power Device Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Adv Ind Sci & Technol, Elect Power Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[3] AIST Tsukbuba Cent 2, Ultralow Loss Power Device Technol Res Body, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

graphite susceptor; residual impurities; SiC coating;

D O I：

10.4028/www.scientific.net/MSF.389-393.215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of graphite susceptor purity on the residual impurity contamination in undoped 4H-SiC epitaxial film grown at higher temperature such as 1600 degreesC is investigated. The effect of degradation of SiC coating layer on the purity of the epitaxial layer is studied. SiC coating layer is degraded after only a few repetition of growth-runs. The concentrations of N, Al, B, Ti and V in the epitaxial layer have been found to increase with the deterioration of SiC coating layer. Therefore, serious consideration on the effect of contamination from the graphite susceptor is required.

引用

页码：215 / 218

页数：4

共 6 条

[1] Nitrogen doping concentration as determined by photoluminescence in 4H- and 6H-SiC [J].