Properties of platinum films by liquid-source MOCVD in H2 and O2

A preliminary evaluation of Pt films, deposited at rates of 0.4-7 nm/min by a potentially manufacturable liquid-source MOCVD technique, was carried out with respect to microstructure, step coverage, and electrical properties. The Pt films (12-140 nm) were deposited on various substrates (thermal-SiO2/Si, native-oxide/Si, TiN/SiO2/Si) via the pyrolysis of trimethyl methyl cyclopentadienyl platinum [(CH3)(3)CH3CpPt]. The substrate temperature regimes through which Pt deposition occurred, were 175-250 degreesC and 300-450 degreesC in H-2 and O-2 ambient, respectively. The growth mechanisms of the Pt films, deposited under 112 and O-2 ambient, were inferred from the observed growth rate, texture evolution, grain size, and estimated nucleation density. Additionally, the step-coverage of Pt deposited on TiN at T-sub of 375 degreesC in O-2 was 80%. Moreover, the resistivity of a 30 nm Pt film was 22.8 muOmega-cm.