Preparation of iridium films by liquid source metalorganic chemical vapor deposition

被引：27

作者：

Dey, SK ^{[1
]}

Goswami, J

Wang, CG

Majhi, P

机构：

[1] Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 9AB期

关键词：

MOCVD; liquid source; thin film; iridium; metalorganic;

D O I：

10.1143/JJAP.38.L1052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 degrees C from tetrahydrofuran (TNF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD =cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 degrees C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 mu Ohm cm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.

引用

页码：L1052 / L1054

页数：3

共 15 条

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