Effect of oxygen gas addition on preparation of iridium and platinum films by metal-organic chemical vapor deposition

被引：14

作者：

Goto, T ^{[1
]}

Vargas, JR ^{[1
]}

Hirai, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

MATERIALS TRANSACTIONS JIM | 1999年 / 40卷 / 03期

关键词：

metal-organic chemical vapor deposition; iridium film; platinum film; oxygen gas addition; epitaxial growth;

D O I：

10.2320/matertrans1989.40.209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of oxygen gas addition on deposition rates, composition and microstructure was investigated in preparing Ir and Pt films by metal-organic chemical vapor deposition using Ir- and Pt-acetylacetonate precursors. Without the addition of oxygen gas, 20 mass% of carbon at most was contained in the films. The carbon was amorphous, surrounding metal particles of several nanometers in diameter. The addition of oxygen gas is effective in obtaining carbon-free Ir and Pt films, and the films grow epitaxially on MgO and sapphire single crystal substrates.

引用

页码：209 / 213

页数：5

共 26 条

[1] SPUTTER-DEPOSITION OF [111]-AXIS ORIENTED RHOMBOHEDRAL PZT FILMS AND THEIR DIELECTRIC, FERROELECTRIC AND PYROELECTRIC PROPERTIES [J].

ADACHI, M ;

MATSUZAKI, T ;

YAMADA, T ;

SHIOSAKI, T ;

KAWABATA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (04) :550-553

[2] TECHNOLOGY OF FABRICATION AND ELECTRICAL CHARACTERISTICS OF W, MO, NI AND IR, PD CONTACTS WITH YBA2CU3O7-X [J].

BESSERGENEV, VG ;

GELFOND, NV ;

IGUMENOV, IK ;

ILYASOV, SS ;

KANGIEV, RD ;

KOVALEVSKAYA, YA ;

KRAVCHENKO, VS ;

SLOBODYAN, SA ;

MOTORIN, VI ;

SHESTAK, AF .

SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1991, 4 (07) :273-278

[3]

BLOCHER JM, 1966, VAPOR DEPOSITION, P3

[4] LOW-TEMPERATURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF PLATINUM [J].

CHEN, YJ ;

KAESZ, HD ;

THRIDANDAM, H ;

HICKS, RF .

APPLIED PHYSICS LETTERS, 1988, 53 (17) :1591-1592

[5] LASER-ASSISTED ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF FILMS OF RHODIUM AND IRIDIUM [J].

COHAN, JS ;

YUAN, H ;

WILLIAMS, RS ;

ZINK, JI .

APPLIED PHYSICS LETTERS, 1992, 60 (11) :1402-1403

[6]

DONNET JB, 1976, CARBON BLACK PHYSICS

[7] PLASMA CHEMICAL VAPOR-DEPOSITION OF THIN PLATINUM FILMS [J].

FEURER, E ;

KRAUS, S ;

SUHR, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2799-3802

[8] TEMPERATURE EFFECT ON PHOTOLYTIC DEPOSITION OF PLATINUM OHMIC CONTACTS AND SCHOTTKY DIODES [J].

GARRIDO, C ;

VANDENBERGH, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (03) :265-272

[9] AN XPS STUDY OF THE COMPOSITION OF IRIDIUM FILMS OBTAINED BY MO CVD [J].

GELFOND, NV ;

IGUMENOV, IK ;

BORONIN, AI ;

BUKHTIYAROV, VI ;

SMIRNOV, MY ;

PROSVIRIN, IP ;

KWON, RI .

SURFACE SCIENCE, 1992, 275 (03) :323-331

[10] EFFECT OF THE DEPOSITION TEMPERATURE ON THE IRIDIUM FILM MICROSTRUCTURE PRODUCED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION - SAMPLE CHARACTERIZATION USING X-RAY TECHNIQUES [J].

GELFOND, NV ;

TUZIKOV, FV ;

IGUMENOV, IK .

THIN SOLID FILMS, 1993, 227 (02) :144-152

← 1 2 3 →