TEMPERATURE EFFECT ON PHOTOLYTIC DEPOSITION OF PLATINUM OHMIC CONTACTS AND SCHOTTKY DIODES

被引：4

作者：

GARRIDO, C ^{[1
]}

VANDENBERGH, H ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,CHIM TECH LAB,CH-1015 LAUSANNE,SWITZERLAND

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 53卷 / 03期

关键词：

D O I：

10.1007/BF00324263

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An argon laser is used to induce Laser Chemical Vapor Deposition (LCVD) of platinum using platinum bihexafluoroacetyl-acetonate as precursor. The process can be photolytic or pyrolytic depending on the laser power used. These processes are studied by recording the laser light transmitted through of deposit and substrate. Photolytic deposition takes place either in the adsorbed phase or in the gaseous phase depending on the temperature induced by radiation absorption. The induced-temperature calculation using a model developed by us confirms the experimental results obtained. The influence of the substrate base temperature and the precursor product vapour pressure confirms photolytic deposition from the adsorbed phase for low powers and from the vapour phase onwards for high powers. The deposits obtained present a typical 96% Pt composition and its use in Schottky diode manufacture permit obtaining devices with good characteristics in spite of experimental limitations.

引用

页码：265 / 272

页数：8

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