Thermal stability of metal electrodes (Pt, Ru, & Ir) on polycrystalline silicon in ferroelectric capacitors

被引：6

作者：

Jeon, YC ^{[1
]}

Seon, JM ^{[1
]}

Joo, JH ^{[1
]}

Oh, KY ^{[1
]}

Roh, JS ^{[1
]}

Kim, JJ ^{[1
]}

Kim, DS ^{[1
]}

机构：

[1] LG SEMICON CO LTD,ULSI LAB,ADV ANALYT TECHNOL GRP,CHEONGJOO 361480,SOUTH KOREA

来源：

INTEGRATED FERROELECTRICS | 1997年 / 17卷 / 1-4期

关键词：

metal electrodes; polycrystalline silicon; ferroelectric capacitors;

D O I：

10.1080/10584589708013023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrode materials such as Pt, Ru, and Ir on polycrystalline silicon were annealed and the thermal stability was investigated to check the feasibility of the structure. Sputtered Pt reacted with silicon to form PtSi at a low temperature of 400 degrees C and the top layer of silicide was oxidized in oxygen ambient. Ru and Ir films by sputtering were also silicidized above 550 degrees C and it made voids beneath silicide layers. All of the films are found to allow oxygen to diffuse through them and to get the underlying layers oxidized. However, Ir deposited by e-beam evaporation did not form silicide up to 700 degrees C and did not get oxidized up to 550 degrees C. Ir also allowed oxygen diffusion when annealed at 550 degrees C or lower temperature, but it was prevented when annealed at 700 degrees C.

引用

页码：489 / 500

页数：12

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