Low-energy electron-beam effects on poly(methyl methacrylate) resist films

被引：24

作者：

Bermudez, VM ^{[1
]}

机构：

[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期

关键词：

D O I：

10.1116/1.591134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of low-energy electron irradiation (10-50 eV, up to similar to 2 x 10(17) e cm(-2)) on thin films of poly(methyl methacrylate) (PMMA), deposited on air-exposed Al, have been studied in situ as a function of temperature (similar to 200-300 K) using polarization-modulated infrared reflection absorption spectroscopy. Near 300 K damage is seen in the form of a loss of material, as shown by a decrease in the intensity of the entire PMMA spectrum. At low temperature, in addition to damage, evidence is seen for a radiation-induced change in chain configuration leading to an increased interaction between ester groups and the Al surface. This configuration is unstable and is removed by annealing to similar to 300 K. [S0734-211X(99)01706-0].

引用

页码：2512 / 2518

页数：7

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