Charging and discharging of electron beam resist films

被引:42
作者
Bai, M [1 ]
Pease, RFW [1 ]
Tanasa, C [1 ]
McCord, MA [1 ]
Pickard, DS [1 ]
Meisburger, D [1 ]
机构
[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期
关键词
D O I
10.1116/1.591091
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Pattern placement imprecision due to charging of the workpiece is believed to be a significant contribution to the total positional error in electron beam lithography. In an earlier work, Liu et al. [J. Vac. Sci. Technol. B 13, 1979 (1995)] reported that the surface potential of exposed resist could be negative or positive according to the resist thickness and the electron energy. In that work the authors were constrained to use a flood beam. In this study, we report a new independent approach using a Kelvin probe electrometer to measure the surface potential after exposure by a focused beam. There is a qualitative agreement with the earlier work in that the surface potential tends to be less positive at lower electron energies and for thicker resists. We observed positive surface potentials at 10 and 20 keV beam irradiation. This positive charging is much more evident in polybutene sulfone than in UV5. (C) 1999 American Vacuum Society. [S0734-211X(99)09906-0].
引用
收藏
页码:2893 / 2896
页数:4
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