Charge carrier injection and transport in PPV light emitting devices

被引：13

作者：

Brutting, W

Buchwald, E

Egerer, G

Meier, M

Zuleeg, K

Schwoerer, M

机构：

来源：

SYNTHETIC METALS | 1997年 / 84卷 / 1-3期

关键词：

poly(phenylene vinylene); metal-semiconductor interfaces; Schottky barrier;

D O I：

10.1016/S0379-6779(96)04105-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Charge carrier injection and transport in light emitting devices based on poly-phenylene-vinylene are investigated by internal photoemission and thermally stimulated currents. The barrier heights for electron injection depend very weakly on the metal work function, indicating a significant influence of surface states or interfacial layers. Trap states in PPV are detected with trap energies ranging from 0.1eV in fresh samples to 0.9eV in aged samples.

引用

页码：677 / 678

页数：2

共 9 条

[1] BETTENHAUSEN J, IN PRESS MACROMOLECU
[2] BUCHWALD E, 1995, ADV MATER, V7, P839, DOI 10.1002/adma.19950071004
[3] LIGHT-EMITTING-DIODES BASED ON CONJUGATED POLYMERS
BURROUGHES, JH
BRADLEY, DDC
BROWN, AR
MARKS, RN
MACKAY, K
FRIEND, RH
BURN, PL
HOLMES, AB
[J]. NATURE, 1990, 347 (6293) : 539 - 541
[4] Metal/insulator/polymer - LEDs based on PPV
Meier, M
Colle, M
Karg, S
Buchwald, E
Gmeiner, J
Riess, W
Schwoerer, M
[J]. MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1996, 283 : 197 - 202
[5] EVALUATION OF ELECTRON TRAPPING PARAMETERS FROM CONDUCTIVITY GLOW CURVES IN CADMIUM SULPHIDE
NICHOLAS, KH
WOODS, J
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (07): : 783 - &
[6] RIESS W, 1994, J LUMIN, V60-1, P906
[7] RIESS W, 1996, IN PRESS ORGANIC ELE
[8] INTERNAL PHOTOEMISSION-STUDIES OF METAL-POLYMER INTERFACES
RIKKEN, GLJA
KESSENER, YARR
BRAUN, D
STARING, EGJ
DEMANDT, R
[J]. SYNTHETIC METALS, 1994, 67 (1-3) : 115 - 119
[9] SZE SM, 1981, PHYSICS SEMICONDUCTO

← 1 →