Advanced eclipse pulsed laser deposition method for growth of perovskite crystals and relatives

被引:6
作者
Morita, E
Yamamuro, K
Tachiki, M
Kobayashi, T
机构
[1] Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560
关键词
D O I
10.1016/S0168-583X(96)00696-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We propose and demonstrate here an advanced eclipse pulsed laser deposition method applicable to the epitaxial growth of Bi-compounds. Bi is an element easy to re-evaporate from the film surface during growth, resulting in marked nonstoichiometry, The experimental results elucidated the mechanism of missing Bi, and on the basis of our findings we have arrived at a new stage with the advanced eclipse pulsed laser deposition well working in (Ar + O-2) mixed gas ambient.
引用
收藏
页码:412 / 414
页数:3
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