PULSED LASER DEPOSITION OF STOICHIOMETRIC LINBO3 THIN-FILMS BY USING O2 AND AR GAS-MIXTURES AS AMBIENTS

被引:66
作者
OGALE, SB
NAWATHEYDIKSHIT, R
DIKSHIT, SJ
KANETKAR, SM
机构
[1] Center for Advanced Studies in Materials Science and Solid State Physics, Department of Physics, University of Poona
关键词
D O I
10.1063/1.350509
中图分类号
O59 [应用物理学];
学科分类号
摘要
Stoichiometric thin films of LiNbO3 have been deposited on (100) silicon by a pulsed excimer laser deposition technique. By studying several cases of depositions in vacuum, oxygen, and argon, as well as oxygen-argon mixture as ambients, it is brought out that the desired stoichiometry in the film can be attained only by having an appropriate oxygen-argon mixture during deposition. The films have been characterized by x-ray diffraction, infrared transmission, and spectroscopic ellipsometry techniques.
引用
收藏
页码:5718 / 5720
页数:3
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