A. wideband 77-GHz, 17.5-dBm fully integrated power amplifier in silicon

被引：76

作者：

Komijani, Abbas ^{[1
]}

Hajimiri, Ali ^{[1
]}

机构：

[1] CALTECH, Microelect Lab, Pasadena, CA 91125 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2006年 / 41卷 / 08期

关键词：

BiCMOS; integrated circuits; microstrip; phased arrays; power amplifiers; radio transmitters; SiGe; silicon; silicon germanium;

D O I：

10.1109/JSSC.2006.877258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 77-GHz, +17.5 dBm power amplifier (PA) with fully integrated 50-Omega input and output matching and fabricated in a 0.12-mu m SiGe BiCMOS process is presented. The PA achieves a peak power gain of 17 dB and a maximum single-ended output power of 17.5 dBm with 12.8% of power-added efficiency (PAE). It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a 1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in an area of 0.6 mm(2). By using a separate image-rejection filter incorporated before the PA, the rejection at IF frequency of 25 GHz is improved by 35 dB, helping to keep the PA design wideband.

引用

页码：1749 / 1756

页数：8

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