SiGe bipolar transceiver circuits operating at 60 GHz

被引:201
作者
Floyd, BA [1 ]
Reynolds, SK [1 ]
Pfeiffer, UR [1 ]
Zwick, T [1 ]
Beukema, T [1 ]
Gaucher, B [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
direct-conversion receiver; low-noise amplifier (LNA); millimeter-wave bipolar integrated circuits; mixer; power amplifier; SiGe; V-band; voltage-controlled oscillator (VCO); 60; GHz;
D O I
10.1109/JSSC.2004.837250
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-noise amplifier, direct-conversion quadrature mixer, power amplifier, and voltage-controlled oscillators have been implemented in a 0.12-mum, 200-GHz f(T)/290-GHz f(MAX) SiGe bipolar technology for operation at 60 GHz. At 61.5 GHz, the two-stage LNA achieves 4.5-dB NF, 15-dB gain, consuming 6 mA from 1.8 V. This is the first known demonstration of a silicon LNA at V-band. The downconverter consists of a preamplifier, I/Q double-balanced mixers, a frequency tripler, and a quadrature generator, and is again the first known demonstration of silicon active mixers at V-band. At 60 GHz, the downconverter gain is 18.6 dB and the NF is 13.3 dB, and the circuit consumes 55 mA from 2.7 V, while the output buffers consume an additional 52 mA. The balanced class-AB PA provides 10.8-dB gain, +11.2-dBm 1-dB compression point, 4.3% maximum PAE, and 16-dBm saturated output power. Finally, fully differential Colpitts VCOs have been implemented at 22 and 67 GHz. The 67-GHz VCO has a phase noise better than -98 dBc/Hz at 1-MHz offset, and provides a 3.1% tuning range for 8-mA current consumption from a 3-V supply.
引用
收藏
页码:156 / 167
页数:12
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