A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output

被引:28
作者
Baeyens, Y [1 ]
Chen, YK [1 ]
机构
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源
2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年
关键词
D O I
10.1109/MWSYM.2003.1212509
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A fully integrated push-push voltage controlled oscillator (VCO) with simultaneous differential fundamental output is realized using an advanced 0.13mum SiGe HBT process. A maximum oscillation frequency of 155 GHz, up to -5 dBm output power at 150 GHz; and 30 GHz wide tuning range is achieved. The measured phase-noise in the linear tuning range is around -85 dBc/Hz at 1 MHz offset from carrier. Up to +3 dBm output power and 6 dB lower phase noise is obtained at each of the fundamental frequency differential ports. For a similar but fixed frequency oscillator, -2 dBm output power and a low phase noise of less than -90 dBc/Hz is measured at 1 MHz from the 140 GHz carrier.
引用
收藏
页码:877 / 880
页数:4
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