InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave tranceivers

被引：43

作者：

Baeyens, Y

Georgiou, G

Weiner, JS

Leven, A

Houtsma, V

Paschke, P

Lee, Q

Kopf, RF

Yang, Y

Chua, L

Chen, C

Liu, CT

Chen, YK

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Lucent Technol GmbH, Opt Networking Grp, D-90411 Nurnberg, Germany

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2002年 / 37卷 / 09期

关键词：

high-speed integrated circuits; heterojunction bipolar transistors; indium compounds; millimeter-wave bipolar transistor amplifiers; millimeter-wave bipolar transistor oscillators; optical receivers; optical transmitters;

D O I：

10.1109/JSSC.2002.801188

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The combination of device speed (f(T), f(max) > 150 GHz) and breakdown voltage (V-bceo > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-mum-wide emitter finger: a low. phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V-PP differential output swing, a distributed 40-Gb/s driver amplifier with 6-V-PP differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.

引用

页码：1152 / 1159

页数：8

共 17 条

[1] InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers. [J].