A 74-GHz bandwidth InAlAs/InGaAs-InP HBT distributed amplifier with 13-dB gain

被引：35

作者：

Baeyens, Y ^{[1
]}

Pullela, R ^{[1
]}

Mattia, JP ^{[1
]}

Tsai, HS ^{[1
]}

Chen, YK ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 11期

关键词：

distributed amplifiers; HBT; millimeter-wave bipolar transistor amplifiers; MMIC's;

D O I：

10.1109/75.808036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To date, distributed amplifiers based on heterojunction bipolar transistors (HBT's) have consistently shown lower gain-bandwidth products than their high electron mobility transistor (HEMT) counterparts. By using improved design techniques, we report in this letter a single-stage distributed amplifier with 13-dB gain and 74 GHz 3-dB bandwidth, based on InAlAs/InGaAs-InP HBT's with 160-GHz fT and 140-GHz f(max). The high gain and bandwidth results in a gain-bandwidth product of 330 GHz, which is, to our knowledge, the highest reported for HBT-based amplifiers and rivals that of the best InP HEMT distributed amplifiers with e-beam written gate of 0.1-0.15 mu m dimension.

引用

页码：461 / 463

页数：3

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