5-60-GHZ HIGH-GAIN DISTRIBUTED-AMPLIFIER UTILIZING INP CASCODE HEMTS

被引：4

作者：

YUEN, C

PAO, YC

BECHTEL, NG

机构：

[1] Litton Solid State Division, Santa Clara

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1992年 / 27卷 / 10期

关键词：

D O I：

10.1109/4.156449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-gain InP MMIC cascode distributed amplifier has been developed which has 12 dB of gain from 5 to 60 GHz with over 20-dB gain control capability and a noise figure of 2.5-4 dB in the Ka band. Lattice-matched InAlAs/InGaAs cascode HEMT's on InP substrate with 0.25-mum gate length were the active devices. Microstrip was the transmission medium for this MMIC with an overall chip dimension of 2.3 x 0.9 mm 2. The gain/noise figure advantages of the InP HEMT over the AlGaAs HEMT and the superior gain performance of the cascode HEMT over the common-source HEMT are demonstrated.

引用

页码：1434 / 1438

页数：5

共 7 条

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