InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers.

被引：10

作者：

Baeyens, Y ^{[1
]}

Georgiou, G ^{[1
]}

Weiner, J ^{[1
]}

Houtsma, V ^{[1
]}

Paschke, P ^{[1
]}

Lee, Q ^{[1
]}

Leven, A ^{[1
]}

Kopf, R ^{[1
]}

Frackoviak, J ^{[1
]}

Chen, C ^{[1
]}

Liu, CT ^{[1
]}

Chen, YK ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001 | 2001年

关键词：

D O I：

10.1109/GAAS.2001.964361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The combination of device speed (f(T), f(max)>150 GHz) and breakdown voltage (V-bceo of about 10V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeterwave low phase-noise VCO's up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.

引用

页码：125 / 128

页数：4

共 8 条

[1] Compact InP-based HBT VCOs with a wide tuning range at W- and D-band [J].