Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications

被引：5

作者：

Kopf, RF

Hamm, RA

Wang, YC

Ryan, RW

Tate, A

Melendes, MA

Pullela, R

Chen, YK

Thevin, J

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Instruments SA Inc, Thin Film Grp, Edison, NJ 08820 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 02期

关键词：

InGaAs/InP; ECR plasma etching; optical emission spectroscopy;

D O I：

10.1007/s11664-000-0146-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated reduced area InGaAs/lnP DHBTs for high speed circuit applications. To produce the small dimensions required, a process involving both wet chemical and ECR plasma etchingwas developed. Optical emission spectros-copy was used for end-point detection during plasma etching, With this improved process, an f(t) of 170 and f(max) of 200 GHz were achieved for 1.2 x 3 mu m(2) emitter size devices with a 500 Angstrom base.

引用

页码：222 / 224

页数：3

共 13 条

[1]

[Anonymous], personal communication

[2] COMPARISON OF GRADED AND ABRUPT JUNCTION IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

BAQUEDANO, JA ;

LEVI, AFJ ;

JALALI, B .

APPLIED PHYSICS LETTERS, 1994, 64 (01) :67-69

[3] InP/InGaAs double-HBT technology for high bit-rate communication circuits [J].

Caffin, D ;

Bouche, M ;

Meghelli, M ;

Duchenois, AM ;

Launay, P .

ELECTRONICS LETTERS, 1997, 33 (02) :149-151

[4]

Chang C. E., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P795, DOI 10.1109/IEDM.1993.347279

[5] New submicron HBT IC technology demonstrates ultra-fast, low-power integrated circuits [J].

Hafizi, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) :1862-1868

[6] Modeling and algorithm development for automated optical endpointing of an HBT emitter etch [J].

Hanish, CK ;

Grizzle, JW ;

Chen, HH ;

Kamlet, LI ;

Thomas, S ;

Terry, FL ;

Pang, SW .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (12) :1401-1408

[7] Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability [J].

Kopf, RF ;

Hamm, RA ;

Ryan, RW ;

Burm, J ;

Tate, A ;

Chen, YK ;

Georgiou, G ;

Lang, DV ;

Ren, F .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (08) :954-960

[8] EFFECTS OF A COMPOSITIONALLY-GRADED INXGA1-XAS BASE IN ABRUPT-EMITTER INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

KURISHIMA, K ;

NAKAJIMA, H ;

YAMAHATA, S ;

KOBAYASHI, T ;

MATSUOKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B) :1221-1227

[9] Effect of Ar addition in ECR CH4/H-2/Ar plasma etching of GaAs, InP and InGaP [J].

Lee, JW ;

Pearton, SJ ;

Abernathy, CR ;

Hobson, WS ;

Ren, F .

SOLID-STATE ELECTRONICS, 1996, 39 (07) :1095-1099

[10] End point control via optical emission spectroscopy [J].

Litvak, HE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01) :516-520

← 1 2 →