COMPARISON OF GRADED AND ABRUPT JUNCTION IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引:12
作者
BAQUEDANO, JA
LEVI, AFJ
JALALI, B
机构
[1] UNIV SO CALIF,DEPT ELECT ENGN & ELECTROPHYS,LOS ANGELES,CA 90089
[2] UNIV CALIF LOS ANGELES,DEPT ELECTR ENGN & ELECTROPHYS,LOS ANGELES,CA 90024
关键词
D O I
10.1063/1.110871
中图分类号
O59 [应用物理学];
学科分类号
摘要
We compare calculated intrinsic forward delay as a function of base thickness and p-type doping level in n-p-n heterojunction bipolar transistors with graded as well as abrupt Al0.48In0.52AS/In0.53Ga0.47As and InP/In0.53Ga0.47As emitter-base junctions. We find that, for a given p-type concentration and fixed base delay time, an InP/In0.53Ga0.47As abrupt junction design results in high intrinsic speed, low base resistance, and modest power consumption.
引用
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页码:67 / 69
页数:3
相关论文
共 13 条
[1]  
BAQUEDANO JA, 1993, APPL PHYS LETT, V63, P2261
[2]   INFLUENCE OF TEMPERATURE ON ELECTRON-TRANSPORT IN BIPOLAR-DEVICES [J].
BARDYSZEWSKI, W ;
YEVICK, D .
APPLIED PHYSICS LETTERS, 1989, 54 (09) :837-839
[3]   NUMERICAL STUDY OF NONEQUILIBRIUM ELECTRON-TRANSPORT IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
BETON, PH ;
LEVI, AFJ .
APPLIED PHYSICS LETTERS, 1989, 55 (03) :250-252
[4]  
FAUCETT W, 1970, J PHYS CHEM SOLIDS, V31, P1963
[5]   MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].
FISCHETTI, MV ;
LAUX, SE .
PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745
[6]   THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].
JACOBONI, C ;
REGGIANI, L .
REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705
[7]   INFLUENCE OF BASE THICKNESS ON COLLECTOR BREAKDOWN IN ABRUPT ALINAS/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].
JALALI, B ;
CHEN, YK ;
NOTTENBURG, RN ;
SIVCO, D ;
HUMPHREY, DA ;
CHO, AY .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (09) :400-402
[8]  
JENSEN JF, 1992, 1992 IEEE GAAS IC S, P101
[9]  
LASKAR J, 1993, IEEE T ELECTRON DEV, V41, P1942
[10]   VERTICAL SCALING IN HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NONEQUILIBRIUM BASE TRANSPORT [J].
LEVI, AFJ ;
JALALI, B ;
NOTTENBURG, RN ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1992, 60 (04) :460-462