InP/InGaAs double-HBT technology for high bit-rate communication circuits

被引：11

作者：

Caffin, D

Bouche, M

Meghelli, M

Duchenois, AM

Launay, P

机构：

[1] France Telecom., CNET/PAB, Laboratoire de Bagneux, 92225 Bagneux Cedex, 196, Avenue Henri Ravera

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 02期

关键词：

heterojunction bipolar transistors; optical communication; digital integrated circuits;

D O I：

10.1049/el:19970069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A InP/InGaAs DHBT technology has been developed to meet the high speed requirements of circuits required in 20 Gbit/s optical communication links. High performance devices were achieved with a current gain over 100 and cutoff frequencies of > 50 GHz. The technology showed excellent behaviour in terms of yield and homogeneity. Over 20 Gbit/s digital ICs were realised: among them, a 20 Gbit/s external modulator driver, and a 32 Gbit/s 2:1 multiplexer.

引用

页码：149 / 151

页数：3

共 8 条

[1] WIDE-BAND HBT CIRCUITS FOR OPERATION ABOVE 10 GHZ AND POWER-SUPPLY VOLTAGES BELOW 5V [J].