WIDE-BAND HBT CIRCUITS FOR OPERATION ABOVE 10 GHZ AND POWER-SUPPLY VOLTAGES BELOW 5V

被引:3
作者
BANU, M
JALALI, B
HUMPHREY, DA
MONTGOMERY, RK
NOTTENBURG, RN
HAMM, RA
PANISH, MB
机构
[1] AT&T Bell Laboratories, Murray Hill
关键词
AMPLIFIERS; INTEGRATED CIRCUITS;
D O I
10.1049/el:19920221
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-stage and two-stage differential cascode amplifiers, and a 2:1 multiplexer, fabricated in InP/InGaAs HBT technology and powered from less than 5V supplies, are presented. The amplifiers have typical DC gains of 21 and 33dB, respectively, and unity-gain bandwidths in excess of 15GHz, with approximately 20dB gain at 10GHz. The multiplexer was tested at rates up to 20Gbit/s.
引用
收藏
页码:354 / 355
页数:2
相关论文
共 7 条
[1]   10 GBIT/S BIPOLAR LASER DRIVER [J].
BANU, M ;
JALALI, B ;
NOTTENBURG, R ;
HUMPHREY, DA ;
MONTGOMERY, RK ;
HAMM, RA ;
PANISH, MB .
ELECTRONICS LETTERS, 1991, 27 (03) :278-280
[2]   DEMONSTRATION OF RETIMING CAPABILITY OF SILICON BIPOLAR TIME-DIVISION MULTIPLEXER OPERATING TO 24 GBIT/S [J].
HAUENSCHILD, J ;
REIN, HM ;
MCFARLAND, W ;
DOERNBERG, J ;
PETTENGILL, D .
ELECTRONICS LETTERS, 1991, 27 (11) :978-979
[3]  
JALALI B, 1991, INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2, P228, DOI 10.1109/ICIPRM.1991.147343
[4]   5V, DC-12 GHZ INP/INGAAS HBT AMPLIFIER [J].
NOTTENBURG, RN ;
BANU, M ;
JALALI, B ;
HUMPHREY, DA ;
MONTGOMERY, RK ;
HAMM, RA ;
PANISH, MB .
ELECTRONICS LETTERS, 1990, 26 (24) :2016-2018
[5]   23 GBIT/S SI BIPOLAR DECISION CIRCUIT CONSISTING OF 2J GBIT/S MUX AND DEMUX ICS [J].
REIN, HM ;
HAUENSCHILD, J ;
MCFARLAND, W ;
PETTENGILL, D .
ELECTRONICS LETTERS, 1991, 27 (11) :974-976
[6]  
WANG KC, 1991, FEB ISSCC, P154
[7]  
YAMAUCHI Y, 1989 P IEEE GAAS S, P121