10 GBIT/S BIPOLAR LASER DRIVER

被引：21

作者：

BANU, M

JALALI, B

NOTTENBURG, R

HUMPHREY, DA

MONTGOMERY, RK

HAMM, RA

PANISH, MB

机构：

[1] AT&T Bell Laboratories, NJ 07974-2070, 600 Mountain Avenue, Murray Hill

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 03期

关键词：

BIPOLAR DEVICES; OPTICAL COMMUNICATION;

D O I：

10.1049/el:19910177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 10Gbit/s bipolar laser driver fabricated in InP/InGaAs HBT technology is reported. Typically, the circuit delivers 100 mA of modulation current and 50 mA of DC current with less than 1 W power dissipation. Low jitter and fast rise and fall times are responsible for a clean output eye pattern.

引用

页码：278 / 280

页数：3

共 7 条

[1] ASBECK PM, 1990, C OPTICAL FIBER COMM, P68
[2] ULTRAHIGH BE DOPING OF GA0.47IN0.53AS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
HAMM, RA
PANISH, MB
NOTTENBURG, RN
CHEN, YK
HUMPHREY, DA
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (25) : 2586 - 2588
[3] JALALI B, 1990, IEDM
[4] NOTTENBURG RN, 1989, GAAS IC SYMPOSIUM /, P135
[5] 5V, DC-12 GHZ INP/INGAAS HBT AMPLIFIER
NOTTENBURG, RN
BANU, M
JALALI, B
HUMPHREY, DA
MONTGOMERY, RK
HAMM, RA
PANISH, MB
[J]. ELECTRONICS LETTERS, 1990, 26 (24) : 2016 - 2018
[6] MULTI-GIGABIT-PER-SECOND SILICON BIPOLAR ICS FOR FUTURE OPTICAL-FIBER TRANSMISSION-SYSTEMS
REIN, HM
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (03) : 664 - 675
[7] SUGETA T, 1990, C OPTICAL FIBER COMM, P69

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