HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：25

作者：

CHAU, HF

BEAM, EA

机构：

[1] Central Research Laboratories, Texas Instruments Incorporated, Dallas

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 08期

关键词：

D O I：

10.1109/55.225588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report very high-performance MOMBE-grown common-emitter InP/InGaAs single heterojunction bipolar transistors (HBT's) with a maximum oscillation frequency (f(max)) of 180 GHz and current-gain cutoff frequency (f(T)) of 100 GHz at a current density of 1 x 10(5) A/cm2. This corresponds to an effective (R(B)C(BC)) = f(T)/(8pif(max)2) delay time of 0.12 ps, which is the smallest value ever reported for common-emitter InP/InGaAs HBT's. The devices have 11-mum2 total emitter area and exhibit current gain values up to 100 at zero base-collector bias voltage. The breakdown voltage of these devices is high with measured BV(CEO) and BV(CBO) of 8 and 17 V, respectively.

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页码：388 / 390

页数：3

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