INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR WITH STEP-GRADED INGAASP COLLECTOR

被引：15

作者：

KURISHIMA, K

NAKAJIMA, H

KOBAYASHI, T

MATSUOKA, Y

ISHIBASHI, T

机构：

[1] NTT LSI Laboratories, Kanagawa 243-01, 3-1, Morinosato Wakamiya, Atsugi-shi

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 03期

关键词：

BIPOLAR DEVICES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An MOCVD-grown InP/InGaAs double-heterojunction bipolar transistor with a step-graded InGaAsP collector is described. This transistor allows high injection current densities over 2.9 x 10(5) A/cm2, which suggests no significant current blocking related to the wide-gap InP layers. A cutoff frequency of 155 GHz and a maximum oscillation frequency of 90 GHz are obtained at the collector current density of 1.6 x 10(5) A/cm2.

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收藏

页码：258 / 260

页数：3

相关论文

共 11 条

[1] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

CHEN, YK ;

NOTTENBURG, RN ;

PANISH, MB ;

HAMM, RA ;

HUMPHREY, DA .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) :267-269

[2] HIGH-FREQUENCY STUDY OF NONEQUILIBRIUM TRANSPORT IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

CHEN, YK ;

LEVI, AFJ ;

NOTTENBURG, RN ;

BETON, PH ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1989, 55 (17) :1789-1791

[3] MINORITY ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

DODD, P ;

LUNDSTROM, M .

APPLIED PHYSICS LETTERS, 1992, 61 (04) :465-467

[4]

FEYGENSON A, 1992 DRC, pIVA6

[5] A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE [J].

ISHIBASHI, T ;

YAMAUCHI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) :401-404

[6]

KURISHIMA K, 1992 INT S GAAS REL

[7]

MATSUOKA Y, 1991 IEDM WASH, P797

[8] HOT-ELECTRON INJECTION IN INALGAAS/INGAAS BALLISTIC COLLECTION TRANSISTORS [J].

NAKAJIMA, H ;

ISHIBASHI, T .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) :B527-B529

[9] INGAAS INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH STEP GRADED INGAASP BETWEEN INGAAS BASE AND INP COLLECTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

OHKUBO, M ;

IKETANI, A ;

IJICHI, T ;

KIKUTA, T .

APPLIED PHYSICS LETTERS, 1991, 59 (21) :2697-2699

[10] BISTABLE HOT-ELECTRON TRANSPORT IN INP/GAINAS COMPOSITE COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

RITTER, D ;

HAMM, RA ;

FEYGENSON, A ;

TEMKIN, H ;

PANISH, MB ;

CHANDRASEKHAR, S .

APPLIED PHYSICS LETTERS, 1992, 61 (01) :70-72