Effect of Ar addition in ECR CH4/H-2/Ar plasma etching of GaAs, InP and InGaP

被引：13

作者：

Lee, JW ^{[1
]}

Pearton, SJ ^{[1
]}

Abernathy, CR ^{[1
]}

Hobson, WS ^{[1
]}

Ren, F ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 07期

关键词：

D O I：

10.1016/0038-1101(95)00397-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：1095 / 1099

页数：5

共 14 条

[1] COMPOUND SEMICONDUCTOR GROWTH BY METALLORGANIC MOLECULAR-BEAM EPITAXY (MOMBE) [J].

ABERNATHY, CR .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1995, 14 (05) :203-253

[2] SELECTIVE ETCHING OF INP AND INGAASP OVER ALINAS USING CH4/H2 REACTIVE ION ETCHING [J].

ARNOT, HEG ;

GLEW, RW ;

SCHIAVINI, G ;

RIGBY, LJ ;

PICCIRILLO, A .

APPLIED PHYSICS LETTERS, 1993, 62 (24) :3189-3191

[3]

CAMERON NI, 1966, J VAC SCI TECHNOL B, V8

[4]

CHERUNG R, 1987, ELECTRON LETT, V23, P857

[5] ELECTRICAL DAMAGE IN NORMAL-GAAS DUE TO METHANE HYDROGEN RIE [J].

COLLOT, P ;

GAONACH, C .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (03) :237-241

[6]

HOBSON WS, 1993, MATER RES SOC SYMP P, V300, P75, DOI 10.1557/PROC-300-75

[7] CHLOROMETHANE-BASED REACTIVE ION ETCHING OF GAAS AND INP [J].

LAW, VJ ;

JONES, GAC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (02) :281-283

[8] ECR/MAGNETIC MIRROR COUPLED PLASMA-ETCHING OF GAAS USING CH4-H-2-AR [J].

LAW, VJ ;

INGRAM, SG ;

JONES, GAC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (09) :945-947

[9] PHOTOEMISSION CHARACTERIZATION OF THE H-2 PLASMA ETCHED SURFACE OF INP [J].

NELSON, AJ ;

FRIGO, S ;

MANCINI, D ;

ROSENBERG, R .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (10) :5619-5622

[10]

Niggebrugge U., 1985, I PHYS C SER, V79, P367

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