Compact InP-based HBT VCOs with a wide tuning range at W- and D-band

被引：40

作者：

Baeyens, Y ^{[1
]}

Dorschky, C ^{[1
]}

Weimann, N ^{[1
]}

Lee, Q ^{[1
]}

Kopf, R ^{[1
]}

Georgiou, G ^{[1
]}

Mattia, JP ^{[1
]}

Hamm, R ^{[1
]}

Chen, YK ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Opt Networking Grp, Murray Hill, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 12期

关键词：

heterojunction bipolar transistors; indium compounds; millimeter-wave bipolar transistor oscillators; monolithic microwave integrated circuits (MMICs); voltage-controlled oscillators (VCOs);

D O I：

10.1109/22.898990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compact monolithic integrated differential voltage-controlled oscillators (VCOs) operating in W-band were realized using InP-based heterojunction bipolar transistors (HBTs), The oscillators, with a total chip size of 0.6 by 0.35 mm(2), are based on a balanced Colpitts-type topology with a coplanar transmission-line resonator, By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz, At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100-Gb/s digital logic. By combining the balanced outputs of a similar differential VCO in a push-push configuration, a compact source with close to -10 dBm output power and a tuning range between 138 and 150 GHz is obtained.

引用

页码：2403 / 2408

页数：6

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