STM atomic-scale characterization of the γ′-Al2O3 film on Ni3Al(111)

被引：53

作者：

Addepalli, SG ^{[1
]}

Ekstrom, B ^{[1
]}

Magtoto, NP ^{[1
]}

Lin, JS ^{[1
]}

Kelber, JA ^{[1
]}

机构：

[1] Univ N Texas, Dept Chem, Denton, TX 76203 USA

来源：

SURFACE SCIENCE | 1999年 / 442卷 / 03期

关键词：

aluminum oxide (Al2O3); Auger electron spectroscopy (AES); interface; low energy electron diffraction (LEED); Ni3Al(111); scanning tunneling microscopy (STM);

D O I：

10.1016/S0039-6028(99)00951-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the first atomic-resolution study by scanning tunneling microscopy (STM) of the gamma'-Al2O3 film formed on the Ni3Al(111) surface at similar to 1000-1100 K. STM images of this well-ordered oxide film reveal a hexagonal array of corrugations with an average interatomic spacing of 3.0+/-0.1 Angstrom. The low-energy electron diffraction (LEED) pattern of the aluminum oxide film reveals the ordering of O2- ions in the surface. On the basis of LEED data and theoretical considerations, the corrugations in the STM atomic-resolution images are tentatively assigned to oxygen anions. Annealing the oxide prepared at similar to 300 K to similar to 1100 K results in the appearance of a metallic aluminum peak in the Auger electron spectra and a substantial increase in the Al-(1396)/Ni-(848) ratio, indicating aluminum segregation close to the surface. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：385 / 399

页数：15

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